Quasiferromagnetism in semiconductors

Ferromagnetic hysteresis has been observed at room temperature in materials not consisting of elements commonly associated with ferromagnetism, such as Co, Ni, Fe, or Mn-containing alloys. In particular, we report on magnetic hysteresis seen in silicon prepared by two different techniques: ion impla...

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Bibliographic Details
Published in:Applied physics letters 2006-05, Vol.88 (18), p.182504-182504-3
Main Authors: Dubroca, T., Hack, J., Hummel, R. E., Angerhofer, A.
Format: Article
Language:English
Subjects:
ARGON
COBALT ALLOYS
ELECTRON SPIN RESONANCE
FERROMAGNETIC MATERIALS
FERROMAGNETISM
HYSTERESIS
ION IMPLANTATION
IRON ALLOYS
IRRADIATION
MAGNETIC SEMICONDUCTORS
MANGANESE ALLOYS
MATERIALS SCIENCE
NEUTRONS
NICKEL ALLOYS
PARAMAGNETISM
SILICON
TEMPERATURE RANGE 0273-0400 K
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Summary:Ferromagnetic hysteresis has been observed at room temperature in materials not consisting of elements commonly associated with ferromagnetism, such as Co, Ni, Fe, or Mn-containing alloys. In particular, we report on magnetic hysteresis seen in silicon prepared by two different techniques: ion implantation (Si and Ar) and neutron irradiation. Because the material investigated contains no ferromagnetic elements, we tentatively call it "quasiferromagnetic." The paramagnetic defects present in these materials were investigated using electron paramagnetic resonance. We suggest that these defects are one of the factors responsible for the observed macroscopic magnetic hysteresis loop.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2198483