Growth of high-quality GaAs on Ge/Si{sub 1-x}Ge{sub x} on nanostructured silicon substrates

Heteroepitaxial growth of GaAs/Ge/SiGe films on submicrostructured Si substrates is reported. One-dimensional, nanometer-linewidth, submicrometer period features were fabricated in Si substrates using interferometric lithography, reactive ion etching, and wet-chemical etching techniques. The quality...

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Bibliographic Details
Published in:Applied physics letters 2006-06, Vol.88 (25)
Main Authors: Vanamu, G., Datye, A.K., Dawson, R., Zaidi, Saleem H., Center for High Technology Materials, 1313 Goddard SE, Albuquerque, New Mexico 87106, Gratings, Inc., 2700 B Broadbent Parkway, NE, Albuquerque, New Mexico 87107
Format: Article
Language:English
Subjects:
CRYSTAL GROWTH
ETCHING
GALLIUM ARSENIDES
GERMANIUM
GERMANIUM ALLOYS
GERMANIUM SILICIDES
HETEROJUNCTIONS
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
NANOSTRUCTURES
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
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Summary:Heteroepitaxial growth of GaAs/Ge/SiGe films on submicrostructured Si substrates is reported. One-dimensional, nanometer-linewidth, submicrometer period features were fabricated in Si substrates using interferometric lithography, reactive ion etching, and wet-chemical etching techniques. The quality of the GaAs layers grown on these structures was investigated using high-resolution x-ray diffraction, transmission electron microscopy, scanning electron microscopy, photoluminescence, and etch pit density measurements. The defect density of GaAs epilayers grown on submicrostructured Si at {approx}6x10{sup 5} cm{sup -2} was two orders of magnitude lower compared with that grown on planar silicon. The optical quality of the GaAs/Ge/SiGe on submicrostructured Si was comparable to that of single crystal GaAs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2214145