Growth of crack-free, carbon-doped GaN and AlGaN∕GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy

The growth of C-doped GaN epilayers on p-Si (111) substrates by ammonia molecular beam epitaxy is reported. Highly insulating and crack-free 1.5-μm-thick C-doped GaN layers have been prepared using ionized methane as the dopant source. Using such a template, AlGaN∕GaN two-dimensional electron gas st...

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Bibliographic Details
Published in:Applied physics letters 2006-06, Vol.88 (25)
Main Authors: Haffouz, S., Tang, H., Rolfe, S., Bardwell, J. A.
Format: Article
Language:English
Subjects:
ALUMINIUM NITRIDES
AMMONIA
CARBON
CARRIER DENSITY
CRACKS
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM NITRIDES
LAYERS
LEAKAGE CURRENT
MATERIALS SCIENCE
METHANE
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TRANSISTORS
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Summary:The growth of C-doped GaN epilayers on p-Si (111) substrates by ammonia molecular beam epitaxy is reported. Highly insulating and crack-free 1.5-μm-thick C-doped GaN layers have been prepared using ionized methane as the dopant source. Using such a template, AlGaN∕GaN two-dimensional electron gas structures with a mobility of 1260cm2∕Vs for a sheet carrier density of 1.24×1013cm−2 have been achieved at room temperature. Fabricated devices demonstrated an excellent pinch-off characteristic as revealed by an on-to-off ratio higher than four orders of magnitudes and by very low leakage current (10μA∕mm at VDS=20V).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2215600