Enhancement of the diffusion of oxygen and boron in silicon crystals under irradiation of infrared laser light

Numerical and experimental analyses revealed the enhancement of diffusion of oxygen and boron by laser irradiation. We studied the effect of laser irradiation on the enhancement of diffusion of boron and oxygen including both isotopes of O 16 and O 18 . The study clarified that the diffusion of the...

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Bibliographic Details
Published in:Journal of applied physics 2006-04, Vol.99 (7), p.073103-073103-4
Main Authors: Liu, Lijun, Tanahashi, Katsutoshi, Yamada-Kaneta, Hiroshi, Kangawa, Y., Kakimoto, Koichi
Format: Article
Language:English
Subjects:
BORON
CRYSTALS
IMPURITIES
IRRADIATION
LASER RADIATION
LASERS
MATERIALS SCIENCE
OXYGEN
OXYGEN 16
OXYGEN 18
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE MEASUREMENT
TEMPERATURE RANGE 1000-4000 K
WAVELENGTHS
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Summary:Numerical and experimental analyses revealed the enhancement of diffusion of oxygen and boron by laser irradiation. We studied the effect of laser irradiation on the enhancement of diffusion of boron and oxygen including both isotopes of O 16 and O 18 . The study clarified that the diffusion of the impurities was enhanced by laser irradiation by about 2.5-8 times more than that in the case without laser irradiation in the temperature range from 990 to 1200 ° C . We confirmed from temperature measurements of the samples that such enhancement was not based on temperature increase caused by laser irradiation but was based on the effect of irradiation of the laser. The effect of frequency of the laser on the diffusion was observed by changing the wavelength of the laser.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2189022