Sub-meV photoluminescence linewidth and >10{sup 6} cm{sup 2}/Vs electron mobility in AlGaAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates

We report sub-meV (as low as 0.6 meV) low-temperature photoluminescence linewidth and high low-temperature electron mobility ({mu}{approx}1-1.5x10{sup 6} cm{sup 2}/Vs) of GaAs quantum wells in AlGaAs barriers grown by standard metalorganic vapor phase epitaxy. These records values are achieved by ep...

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Bibliographic Details
Published in:Journal of applied physics 2006-05, Vol.99 (9)
Main Authors: Pelucchi, E., Moret, N., Dwir, B., Oberli, D.Y., Rudra, A., Gogneau, N., Kumar, A., Kapon, E., Levy, E., Palevski, A., School of Physics and Astronomy, Tel-Aviv University, Tel Aviv
Format: Article
Language:English
Subjects:
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
ELECTRON MOBILITY
GALLIUM ARSENIDES
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
MORPHOLOGY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUBSTRATES
VAPOR PHASE EPITAXY
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Summary:We report sub-meV (as low as 0.6 meV) low-temperature photoluminescence linewidth and high low-temperature electron mobility ({mu}{approx}1-1.5x10{sup 6} cm{sup 2}/Vs) of GaAs quantum wells in AlGaAs barriers grown by standard metalorganic vapor phase epitaxy. These records values are achieved by epitaxial growth on (100) slightly misoriented substrates [{
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2195370