Optical properties of stacked InGaAs sidewall quantum wires in InGaAsP∕InP

We report on the optical properties of threefold stacked InGaAs sidewall quantum wires (QWires) with quaternary InGaAsP barriers grown on shallow-patterned InP (311)A substrates by chemical beam epitaxy. Temperature dependent photoluminescence (PL) reveals efficient carrier transfer from the adjacen...

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Bibliographic Details
Published in:Journal of applied physics 2006-05, Vol.99 (10)
Main Authors: Zhou, D., Nötzel, R., van Otten, F. W. M., Eijkemans, T. J., Wolter, J. H.
Format: Article
Language:English
Subjects:
CRYSTAL GROWTH
EPITAXY
FIBERS
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
MATERIALS SCIENCE
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
POLARIZATION
QUANTUM WELLS
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS
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Summary:We report on the optical properties of threefold stacked InGaAs sidewall quantum wires (QWires) with quaternary InGaAsP barriers grown on shallow-patterned InP (311)A substrates by chemical beam epitaxy. Temperature dependent photoluminescence (PL) reveals efficient carrier transfer from the adjacent quantum wells (QWells) into the QWires at low temperature, thermally activated repopulation of the QWells at higher temperature, and negligible localization of carriers along the QWires. Strong broadening of power dependent PL indicates enhanced state filling in the QWires compared to that in the QWells. Clear linear polarization of the PL from the QWires confirms the lateral quantum confinement of carriers. These results demonstrate excellent optical quality of the sidewall QWire structures with room temperature PL peak wavelength at 1.55μm for applications in fiber-based optical telecommunication systems.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2199088