Self-Formed Barrier with Cu-Mn alloy Metallization and its Effects on Reliability

Advancement of semiconductor devices requires the realization of an ultra-thin (less than 5 nm thick) diffusion barrier layer between Cu interconnect and insulating layers. Self-forming barrier layers have been considered as an alternative barrier structure to the conventional Ta/TaN barrier layers....

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Bibliographic Details
Published in:AIP conference proceedings 2006-02, Vol.817 (1)
Main Authors: Koike, J., Wada, M., Usui, T., Nasu, H., Takahashi, S., Shimizu, N., Yoshimaru, M., Shibata, H.
Format: Article
Language:English
Subjects:
ANNEALING
ATOMS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
COPPER ALLOYS
DIFFUSION BARRIERS
INTERFACES
LAYERS
MANGANESE ALLOYS
MATERIALS SCIENCE
OXIDES
RELIABILITY
SEMICONDUCTOR DEVICES
TANTALUM
TANTALUM NITRIDES
THICKNESS
THIN FILMS
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Summary:Advancement of semiconductor devices requires the realization of an ultra-thin (less than 5 nm thick) diffusion barrier layer between Cu interconnect and insulating layers. Self-forming barrier layers have been considered as an alternative barrier structure to the conventional Ta/TaN barrier layers. The present work investigated the possibility of the self-forming barrier layer using Cu-Mn alloy thin films deposited directly on SiO2. After annealing at 450 deg. C for 30 min, an amorphous oxide layer of 3-4 nm in thickness was formed uniformly at the interface. The oxide formation was accompanied by complete expulsion of Mn atoms from the Cu-Mn alloy, leading to a drastic decrease in resistivity of the film. No interdiffusion was observed between Cu and SiO2, indicating an excellent diffusion-barrier property of the interface oxide.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.2173530