Influence of sputtering pressure on polarity distribution of aluminum nitride thin films

The authors have investigated the influence of sputtering pressure on the polarity distribution of aluminum nitride (AlN) films. They have found that sputtering pressure strongly influences the polarity distribution of AlN films prepared on molybdenum electrodes. The polarity distribution of the AlN...

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Bibliographic Details
Published in:Applied physics letters 2006-12, Vol.89 (24), p.243507-243507-3
Main Authors: Kamohara, Toshihiro, Akiyama, Morito, Ueno, Naohiro, Sakamoto, Michiru, Kano, Kazuhiko, Teshigahara, Akihiko, Kawahara, Nobuaki, Kuwano, Noriyuki
Format: Article
Language:English
Subjects:
ALUMINIUM NITRIDES
CRYSTAL GROWTH
ELECTRODES
MATERIALS SCIENCE
MICROSCOPY
MOLYBDENUM
PIEZOELECTRICITY
SEMICONDUCTOR MATERIALS
SPUTTERING
SURFACE COATING
THIN FILMS
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Summary:The authors have investigated the influence of sputtering pressure on the polarity distribution of aluminum nitride (AlN) films. They have found that sputtering pressure strongly influences the polarity distribution of AlN films prepared on molybdenum electrodes. The polarity distribution of the AlN films was observed by piezoresponse force microscopy. The polarity orientation is decided with respect to each fine grain constituting the AlN films, and polarity conversion from Al polarity to N polarity is observed with increasing sputtering pressure. The piezoelectric response of the films changes from + 3.7 to − 4.4 pC ∕ N with increasing sputtering pressure from 0.36 to 4.0 Pa .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2405849