Laser annealing of laser assisted molecular beam deposited ZnO thin films with application to metal-semiconductor-metal photodetectors

We report on the effect of postdeposition laser annealing of undoped zinc oxide (ZnO) thin films grown by laser assisted molecular beam deposition. Hall-effect measurements show that some undoped ZnO films change from n type with mobility values in the range of 200 cm 2 V − 1 s − 1 to p -type materi...

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Bibliographic Details
Published in:Journal of applied physics 2006-09, Vol.100 (5), p.053106-053106-4
Main Authors: Li, Meiya, Anderson, Wayne, Chokshi, Nehal, DeLeon, Robert L., Tompa, Gary
Format: Article
Language:English
Subjects:
ANNEALING
CRYSTAL GROWTH
DEPOSITION
EV RANGE 01-10
HALL EFFECT
LASERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOCONDUCTIVITY
PHOTODETECTORS
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES
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Summary:We report on the effect of postdeposition laser annealing of undoped zinc oxide (ZnO) thin films grown by laser assisted molecular beam deposition. Hall-effect measurements show that some undoped ZnO films change from n type with mobility values in the range of 200 cm 2 V − 1 s − 1 to p -type material with mobility value of 73 cm 2 V − 1 s − 1 , after laser annealing. The photoconductive behavior was clearly seen on the laser-annealed samples, with values of 0.28 m Ω − 1 . The structural and optical properties of the films were improved with laser annealing as shown by scanning electron microscopy, x-ray photoelectron spectroscopy analysis, and photoluminescence measurement. All of the nonlaser and laser annealed samples showed near-band emission at ∼ 3.3 eV . Metal-semiconductor-metal photodetectors were fabricated from the films.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2344811