Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation: Optical studies

Low temperature photoluminescence and optical absorption studies on 200MeV Ag+15 ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200MeV Ag+15 ion irradiation with a fluence of 1×1012ions∕cm2. The photolumine...

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Bibliographic Details
Published in:Journal of applied physics 2006-12, Vol.100 (11)
Main Authors: Kumar, Ravi, Singh, Fouran, Angadi, Basavaraj, Choi, Ji-Won, Choi, Won-Kook, Jeong, Kwangho, Song, Jong-Han, Khan, M. Wasi, Srivastava, J. P., Kumar, Ajay, Tandon, R. P.
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Language:English
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Summary:Low temperature photoluminescence and optical absorption studies on 200MeV Ag+15 ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200MeV Ag+15 ion irradiation with a fluence of 1×1012ions∕cm2. The photoluminescence spectrum of pure ZnO thin film was characterized by the I4 peak due to the neutral donor bound excitons and the broad green emission. The Co-doped ZnO films show three sharp levels and two shoulders corresponding to 3t2g and 2eg levels of crystal field splitted Co d orbitals, respectively. The ultraviolet-visible absorption spectroscopy also shows the systematic variation of band gap after 200MeV Ag+15 ion irradiation.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2399893