Process Control in Production-Worthy Plasma Doping Technology

As the semiconductor industry continues to scale devices of smaller dimensions and improved performance, many ion implantation processes require lower energy and higher doses. Achieving these high doses (in some cases ~1X1016 ions/cm2) at low energies ( < 3 keV) while maintaining throughput is in...

Full description

Saved in:
Bibliographic Details
Main Authors: Winder, Edmund J, Fang, Ziwei, Arevalo, Edwin, Miller, Tim, Persing, Harold, Singh, Vikram, Parrill, T M
Format: Conference Proceeding
Language:English
Subjects:
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
ION IMPLANTATION
KEV RANGE 01-10
MANUFACTURING
PLASMA
PROCESS CONTROL
PROCESSING
SEMICONDUCTOR MATERIALS
SPACE CHARGE
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:As the semiconductor industry continues to scale devices of smaller dimensions and improved performance, many ion implantation processes require lower energy and higher doses. Achieving these high doses (in some cases ~1X1016 ions/cm2) at low energies ( < 3 keV) while maintaining throughput is increasingly challenging for traditional beamline implant tools because of space-charge effects that limit achievable beam density at low energies. Plasma doping is recognized as a technology which can overcome this problem. In this paper, we highlight the technology available to achieve process control for all implant parameters associated with modem semiconductor manufacturing.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.2401568