Thermal instability and the growth of the InGaAs∕AlGaAs pseudomorphic high electron mobility transistor system

The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC...

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Bibliographic Details
Published in:Applied physics letters 2007-03, Vol.90 (11)
Main Authors: Pellegrino, Joseph G., Qadri, Syed B., Mahadik, Nadeemullah A., Rao, Mulpuri V., Tseng, Wen F., Thurber, Robert, Gajewski, Donald, Guyer, Jonathan
Format: Article
Language:English
Subjects:
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRON MOBILITY
FREEZING OUT
GALLIUM ARSENIDES
INDIUM ARSENIDES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
REFLECTIVITY
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
THERMOCOUPLES
TRANSISTORS
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Summary:The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC)-controlled, growth scheme is compared. Several advantages of the DRS-grown pHEMTs over the TC-controlled version were observed. Modest improvements in mobility, on the order of 2%–3%, were observed in addition to a 20% reduction in carrier freeze-out for the DRS-grown pHEMTs at 77K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2713165