Nanostructuring induced enhancement of radiation hardness in GaN epilayers

The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ion irradiation was studied by means of photoluminescence (PL) and resonant Raman scattering (RRS) spectroscopy. A nanostructuring induced enhancement of the GaN radiation hardness by more than one or...

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Bibliographic Details
Published in:Applied physics letters 2007-04, Vol.90 (16), p.161908-161908-3
Main Authors: Ursaki, V. V., Tiginyanu, I. M., Volciuc, O., Popa, V., Skuratov, V. A., Morkoç, H.
Format: Article
Language:English
Subjects:
ELECTROCHEMISTRY
EPITAXY
GALLIUM NITRIDES
HARDNESS
HEAVY IONS
ION BEAMS
LAYERS
MATERIALS SCIENCE
NANOSTRUCTURES
PHOTOLUMINESCENCE
RADIATION HARDENING
RAMAN EFFECT
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
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Summary:The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ion irradiation was studied by means of photoluminescence (PL) and resonant Raman scattering (RRS) spectroscopy. A nanostructuring induced enhancement of the GaN radiation hardness by more than one order of magnitude was derived from the PL and RRS analyses. These findings show that electrochemical nanostructuring of GaN layers is a potentially attractive technology for the development of radiation hard devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2723076