Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN

The effect of deuterium irradiation on the optical and strain properties of Ga As N ∕ Ga As heterostructures was investigated by photoreflectance and reflectance techniques. The strain occurring in as-grown and deuterated GaAsN layers is monitored and measured by means of photoreflectance spectrosco...

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Bibliographic Details
Published in:Applied physics letters 2007-02, Vol.90 (9), p.091907-091907-3
Main Authors: Geddo, M., Ciabattoni, T., Guizzetti, G., Galli, M., Patrini, M., Polimeni, A., Trotta, R., Capizzi, M., Bais, G., Piccin, M., Rubini, S., Martelli, F., Franciosi, A.
Format: Article
Language:English
Subjects:
CHARGE CARRIERS
CONFINEMENT
DEUTERIUM
ENERGY GAP
EPITAXY
FIBER OPTICS
GALLIUM ARSENIDES
GALLIUM NITRIDES
HETEROJUNCTIONS
ION BEAMS
IRRADIATION
LAYERS
MATERIALS SCIENCE
PHOTONS
REFLECTIVITY
REFRACTIVE INDEX
RESIDUAL STRESSES
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
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Summary:The effect of deuterium irradiation on the optical and strain properties of Ga As N ∕ Ga As heterostructures was investigated by photoreflectance and reflectance techniques. The strain occurring in as-grown and deuterated GaAsN layers is monitored and measured by means of photoreflectance spectroscopy, highlighting the strain inversion after irradiation. By combining static and modulated reflectance results, evidence is given that the deuterium-induced recovery of the GaAs band gap as well as the strain inversion in GaAsN layers are accompanied by a 0.4%-0.8% reduction of the refractive index in the 1.31 and 1.55 μ m spectral windows of interest for fiber optic communications. These results anticipate a single step process to an in-plane confinement of carriers and photons.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2709629