Photoelectrochemical reaction and H{sub 2} generation at zero bias optimized by carrier concentration of n-type GaN

The authors studied the photoelectrochemical properties dependent on carrier concentration of n-type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7x10{sup 17} cm{sup -3}. Using the sample optimized carrier concentration, the authors achieved H{sub 2}...

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Published in:The Journal of chemical physics 2007-02, Vol.126 (5)
Main Authors: Ono, Masato, Fujii, Katsushi, Ito, Takashi, Iwaki, Yasuhiro, Hirako, Akira, Yao, Takafumi, Ohkawa, Kazuhiro, Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578, Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578, Japan and Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Japan and Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601
Format: Article
Language:English
Subjects:
CARRIER DENSITY
ELECTROCHEMISTRY
ELECTROLYTES
GALLIUM NITRIDES
HYDROGEN
INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY
PHOTOCHEMISTRY
PHOTOCONDUCTIVITY
PHOTOEMISSION
PLATINUM
SEMICONDUCTOR MATERIALS
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Summary:The authors studied the photoelectrochemical properties dependent on carrier concentration of n-type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7x10{sup 17} cm{sup -3}. Using the sample optimized carrier concentration, the authors achieved H{sub 2} gas generation at a Pt counterelectrode without extra bias for the first time. The authors also discussed the mechanism of the dependence of photocurrent on the carrier concentration of GaN.
ISSN:0021-9606
1089-7690
DOI:10.1063/1.2432116