Cu films containing insoluble Ru and RuN{sub X} on barrierless Si for excellent property improvements

This letter reports superior properties of Ru- and RuN{sub X}-bearing Cu films deposited by cosputtering on barrierless Si substrates. After annealing at temperatures up to 680 deg. C for 1 h, low resistivity of {approx}3 {mu}{omega} cm and minimal leakage currents as well as no detectable reaction...

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Bibliographic Details
Published in:Applied physics letters 2007-09, Vol.91 (13)
Main Authors: Chu, J. P., Lin, C. H., John, V. S., Department of Electronic Materials, Chin-Min Institute of Technology, Tou-Fen 35153, Taiwan, Institute of Materials Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan
Format: Article
Language:English
Subjects:
ADHESION
ANNEALING
COPPER
DEPOSITION
ELECTRIC CONDUCTIVITY
LEAKAGE CURRENT
MATERIALS SCIENCE
RUTHENIUM
RUTHENIUM NITRIDES
SILICON
SUBSTRATES
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Summary:This letter reports superior properties of Ru- and RuN{sub X}-bearing Cu films deposited by cosputtering on barrierless Si substrates. After annealing at temperatures up to 680 deg. C for 1 h, low resistivity of {approx}3 {mu}{omega} cm and minimal leakage currents as well as no detectable reaction at the Cu/Si interface have confirmed the excellent thermal stability of these Cu(Ru) and Cu(RuN{sub X}) films. Furthermore, the highly stable Cu(RuN{sub X}) film exhibits an outstanding adhesion property, proving to be a very promising candidate for the barrierless Cu metallization.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2790843