Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spect...

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Bibliographic Details
Published in:Applied physics letters 2007-08, Vol.91 (8), p.082103-082103-3
Main Authors: Chen, Wei-Ren, Chang, Ting-Chang, Liu, Po-Tsun, Yeh, Jui-Lung, Tu, Chun-Hao, Lou, Jen-Chung, Yeh, Ching-Fa, Chang, Chun-Yen
Format: Article
Language:English
Subjects:
ARGON
DEPOSITION
MATERIALS SCIENCE
NANOSTRUCTURES
NICKEL
NICKEL COMPOUNDS
NITROGEN
SILICON NITRIDES
SPUTTERING
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY
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Summary:The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2760144