1.58 {mu}m InGaAs quantum well laser on GaAs

We demonstrate the 1.58 {mu}m emission at room temperature from a metamorphic In{sub 0.6}Ga{sub 0.4}As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In{sub 0.32...

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Bibliographic Details
Published in:Applied physics letters 2007-11, Vol.91 (22)
Main Authors: Taangring, I., Ni, H. Q., Wu, B. P., Wu, D. H., Xiong, Y. H., Huang, S. S., Niu, Z. C., Wang, S. M., Lai, Z. H., Larsson, A., State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg
Format: Article
Language:English
Subjects:
CRYSTAL DEFECTS
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASERS
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
OPTIMIZATION
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT
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Summary:We demonstrate the 1.58 {mu}m emission at room temperature from a metamorphic In{sub 0.6}Ga{sub 0.4}As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In{sub 0.32}Ga{sub 0.68}As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250x50 {mu}m{sup 2} broad area laser, a minimum threshold current density of 490 A/cm{sup 2} was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 {mu}m GaAs-based lasers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2803756