Stranski-Krastanow growth of tensile strained Si islands on Ge (001)

Stranski-Krastanow island growth is demonstrated for tensile strained silicon epilayers on Ge (001) substrates over a wide range of growth temperatures. Small, Si-rich islands show sidewall faces near {1,1,10}, whereas larger islands are {113}-terminated truncated pyramids with an aspect ratio near...

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Bibliographic Details
Published in:Applied physics letters 2007-12, Vol.91 (23), p.233106-233106-3
Main Authors: Pachinger, D., Groiss, H., Lichtenberger, H., Stangl, J., Hesser, G., Schäffler, F.
Format: Article
Language:English
Subjects:
ASPECT RATIO
CRYSTAL GROWTH
DISLOCATIONS
EPITAXY
GERMANIUM
LAYERS
MATERIALS SCIENCE
MOLECULAR STRUCTURE
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
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Summary:Stranski-Krastanow island growth is demonstrated for tensile strained silicon epilayers on Ge (001) substrates over a wide range of growth temperatures. Small, Si-rich islands show sidewall faces near {1,1,10}, whereas larger islands are {113}-terminated truncated pyramids with an aspect ratio near 0.1. In contrast to compressively strained Ge on Si, we find for Si on Ge a significantly thicker wetting layer of > 8 ML and coexistence of islands and dislocations.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2820605