Charge storage characteristics of Au nanocrystals embedded in high-k gate dielectrics on Si

The charge storage characteristics of metal-oxide-semiconductor structures containing Au nanocrystals in atomic-layer-deposited high-k gate dielectrics were studied. Cross-sectional high-resolution transmission electron microscopy reveals that the Au nanocrystals are self-assembled in the high-k die...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2007-11, Vol.91 (20)
Main Authors: Wang, Chen-Chan, Wu, Jyun-Yi, Chiou, Yan-Kai, Chang, Che-Hao, Wu, Tai-Bor
Format: Article
Language:English
Subjects:
ALUMINIUM OXIDES
ANNEALING
CAPACITANCE
CAPACITORS
DEPOSITION
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
GOLD
HAFNIUM COMPOUNDS
LAYERS
MATERIALS SCIENCE
NANOSTRUCTURES
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The charge storage characteristics of metal-oxide-semiconductor structures containing Au nanocrystals in atomic-layer-deposited high-k gate dielectrics were studied. Cross-sectional high-resolution transmission electron microscopy reveals that the Au nanocrystals are self-assembled in the high-k dielectric matrix after high temperature annealing in N2 ambient. The memory effect was observed from capacitance-voltage (C-V) relations and a satisfactory charge retention characteristic was obtained in the sample using Al2O3 as the gate dielectric than in the one using Hf2AlOx. Moreover, a saturation of electron storage in the metal-oxide-semiconductor capacitors was also observed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2804567