GaN doped with neodymium by plasma-assisted molecular beam epitaxy

We report in situ doping of GaN with the rare earth element Nd by plasma-assisted molecular beam epitaxy. For the highest Nd effusion cell temperatures, Rutherford backscattering and secondary ion mass spectroscopy data indicate ∼ 5 at. % Nd in epilayers grown on c -plane sapphire. X-ray diffraction...

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Bibliographic Details
Published in:Applied physics letters 2008-02, Vol.92 (6), p.061108-061108-3
Main Authors: Readinger, E. D., Metcalfe, G. D., Shen, H., Wraback, M.
Format: Article
Language:English
Subjects:
CRYSTAL GROWTH
DOPED MATERIALS
GALLIUM NITRIDES
ION MICROPROBE ANALYSIS
LAYERS
LUMINESCENCE
MASS SPECTRA
MASS SPECTROSCOPY
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NEODYMIUM
NITROGEN
PLASMA
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SAPPHIRE
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION
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Summary:We report in situ doping of GaN with the rare earth element Nd by plasma-assisted molecular beam epitaxy. For the highest Nd effusion cell temperatures, Rutherford backscattering and secondary ion mass spectroscopy data indicate ∼ 5 at. % Nd in epilayers grown on c -plane sapphire. X-ray diffraction found no evidence of phase segregation under nitrogen-rich conditions with up to ∼ 1 at. % Nd, with the highest luminescence intensities corresponding to doping of ∼ 0.5 at. % . Spectral correlation of the Nd emission multiplets for above ( 325 nm ) and below ( 836 nm ) GaN bandgap excitations implies enhanced substitutional doping at the Ga site.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2844850