NEXAFS Study of the Annealing Effect on the Local Structure of FIB-CVD DLC

Annealing effect on the local structure of diamond like carbon (DLC) formed by focused ion beam-chemical vapor deposition (FIB-CVD) was investigated by the measurement of near edge x-ray absorption fine structure (NEXAFS) and energy dispersive x-ray (EDX) spectra. Carbon K edge absorption NEXAFS spe...

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Bibliographic Details
Published in:AIP conference proceedings 2007-01, Vol.879 (1), p.1423-1426
Main Authors: Saikubo, Akihiko, Kato, Yuri, Igaki, Jun-ya, Kometani, Reo, Kanda, Kazuhiro, Matsui, Shinji
Format: Article
Language:English
Subjects:
ABSORPTION SPECTROSCOPY
ANNEALING
ATOMS
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
DIAMONDS
EMISSION SPECTRA
EV RANGE
FINE STRUCTURE
GALLIUM
INCIDENCE ANGLE
ION BEAMS
MATERIALS SCIENCE
RESONANCE
X RADIATION
X-RAY SPECTROSCOPY
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Summary:Annealing effect on the local structure of diamond like carbon (DLC) formed by focused ion beam-chemical vapor deposition (FIB-CVD) was investigated by the measurement of near edge x-ray absorption fine structure (NEXAFS) and energy dispersive x-ray (EDX) spectra. Carbon K edge absorption NEXAFS spectrum of FIB-CVD DLC was measured in the energy range of 275-320 eV. In order to obtain the information on the location of the gallium in the depth direction, incidence angle dependence of NEXAFS spectrum was measured in the incident angle range from 0 deg to 60 deg . The peak intensity corresponding to the resonance transition of 1s- > * originating from carbon-gallium increased from the FIB-CVD DLC annealed at 200 deg C to the FIB-CVD DLC annealed at 400 deg C and decreased from that at 400 deg C to that at 600 deg C. Especially, the intensity of this peak remarkably enhanced in the NEXAFS spectrum of the FIB-CVD DLC annealed at 400 deg C at the incident angle of 60 deg . On the contrary, the peak intensity corresponding to the resonance transition of 1s- > * originating from carbon double bonding of emission spectrum decreased from the FIB-CVD DLC annealed at 200 deg C to that at 400 deg C and increased from that at 400 deg C to that at 600 deg C. Gallium concentration in the FIB-CVD DLC decreased from 2.2% of the as-deposited FIB-CVD DLC to 1.5% of the FIB-CVD DLC annealed at 600 deg C from the elementary analysis using EDX. Both experimental results indicated that gallium atom departed from FIB-CVD DLC by annealing at the temperature of 600 deg C.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.2436332