Actinic Mask Inspection using EUV Microscope

We constructed an EUV microscope (EUVM) for actinic mask inspection which consists of Schwarzschild optics (NA0.3, 30X) and an X-ray zooming tube. This system has been used to inspect both complete EUVL masks as well as plain Mo/Si-coated glass substrates. Based on imagery of a 250-nm width pattern,...

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Bibliographic Details
Main Authors: Kinoshita, Hiroo, Hamamoto, Kazuhiro, Tanaka, Yuzuru, Sakaya, Noriyuki, Hosoya, Morio, Shoki, Tsutomu, Lee, Donggun, Watanabe, Takeo
Format: Conference Proceeding
Language:English
Subjects:
DISTRIBUTION
GLASS
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
LAYERS
MASKING
MICROSCOPY
MOLYBDENUM
OPTICS
RESOLUTION
SILICON
SUBSTRATES
SURFACES
TOPOLOGY
ULTRAVIOLET RADIATION
X RADIATION
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Summary:We constructed an EUV microscope (EUVM) for actinic mask inspection which consists of Schwarzschild optics (NA0.3, 30X) and an X-ray zooming tube. This system has been used to inspect both complete EUVL masks as well as plain Mo/Si-coated glass substrates. Based on imagery of a 250-nm width pattern, the resolution of the EUVM can be estimated to be 50 nm or less. The EUVM has also been used to inspect programmed bump phase defects in the EUV mask. Programmed phase defects with widths of 90 nm, 100 nm, 110 nm, a bump of 5 nm and a length of 400 m have been clearly observed. Moreover, the EUVM resolved programmed pit phase defects of 100 nm-wide and 2 nm in depth. The EUVM described here has enabled the of topological defects within a multilayer film. These results show that it is possible to image the internal reflectance distribution of a multilayer using an EUV microscope, without being dependent on surface figure.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.2436344