Characterization of Amorphous High-k Thin Films by EXAFS and GIXS

Silicon and nitrogen incorporated Hf oxide (HfSiON) is considered to be a promising alternative gate insulator for next-generation MOSFETs. EXAFS and GIXS (Grazing Incidence X-ray Scattering) have been applied to the characterization of amorphous HfSiON films at SPring-8. Novel cluster models have b...

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Main Authors: Takemura, Momoko, Yamazaki, Hideyuki, Ohmori, Hirobumi, Yoshiki, Masahiko, Takeno, Shiro, Ino, Tsunehiro, Nishiyama, Akira, Sato, Nobutaka, Hirosawa, Ichiro, Sato, Masugu
Format: Conference Proceeding
Language:English
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Summary:Silicon and nitrogen incorporated Hf oxide (HfSiON) is considered to be a promising alternative gate insulator for next-generation MOSFETs. EXAFS and GIXS (Grazing Incidence X-ray Scattering) have been applied to the characterization of amorphous HfSiON films at SPring-8. Novel cluster models have been suggested based on the analogy to the ordered states for the Zr-O-N ternary system.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.2436366