Characterization of Amorphous High-k Thin Films by EXAFS and GIXS
Silicon and nitrogen incorporated Hf oxide (HfSiON) is considered to be a promising alternative gate insulator for next-generation MOSFETs. EXAFS and GIXS (Grazing Incidence X-ray Scattering) have been applied to the characterization of amorphous HfSiON films at SPring-8. Novel cluster models have b...
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Main Authors: | , , , , , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | Silicon and nitrogen incorporated Hf oxide (HfSiON) is considered to be a promising alternative gate insulator for next-generation MOSFETs. EXAFS and GIXS (Grazing Incidence X-ray Scattering) have been applied to the characterization of amorphous HfSiON films at SPring-8. Novel cluster models have been suggested based on the analogy to the ordered states for the Zr-O-N ternary system. |
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ISSN: | 0094-243X 1551-7616 |
DOI: | 10.1063/1.2436366 |