Formation and dissolution of D-N complexes in dilute nitrides

Deuterium (hydrogen) incorporation in dilute nitrides (e.g., GaAsN and GaPN) modifies dramatically the crystal's electronic and structural properties and represents a prominent example of defect engineering in semiconductors. However, the microscopic origin of D-related effects is still an expe...

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Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2007-11, Vol.76 (20), Article 205323
Main Authors: Berti, Marina, Bisognin, Gabriele, De Salvador, Davide, Napolitani, Enrico, Vangelista, Silvia, Polimeni, Antonio, Capizzi, Mario, Boscherini, Federico, Ciatto, Gianluca, Rubini, Silvia, Martelli, Faustino, Franciosi, Alfonso
Format: Article
Language:English
Subjects:
ABSORPTION
ANNEALING
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
DEUTERIUM
ELECTRONIC STRUCTURE
FINE STRUCTURE
GALLIUM ARSENIDES
HYDROGEN
IMPURITIES
LATTICE PARAMETERS
NITRIDES
NITROGEN
NITROGEN COMPLEXES
NUCLEAR REACTION ANALYSIS
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
STRAINS
X RADIATION
X-RAY DIFFRACTION
X-RAY SPECTRA
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Summary:Deuterium (hydrogen) incorporation in dilute nitrides (e.g., GaAsN and GaPN) modifies dramatically the crystal's electronic and structural properties and represents a prominent example of defect engineering in semiconductors. However, the microscopic origin of D-related effects is still an experimentally unresolved issue. In this paper, we used nuclear reaction analyses and/or channeling, high resolution x-ray diffraction, photoluminescence, and x-ray absorption fine structure measurements to determine how the stoichiometric [D]/[N] ratio and the local structure of the N-D complexes parallel the evolution of the GaAsN electronic and strain properties upon irradiation and controlled removal of D. The experimental results provide the following picture: (i) Upon deuteration, nitrogen-deuterium complexes form with [D]/[N]=3, leading to a neutralization of the N electronic effects in GaAs and to a strain reversal (from tensile to compressive) of the N-containing layer. (ii) A moderate annealing at 250 deg. C gives [D]/[N]=2 and removes the compressive strain, therefore the lattice parameter approaches that of the N-free alloy, whereas the N-induced electronic properties are still passivated. (iii) Finally, annealings at higher temperature (330 deg. C) dissolve the deuterium-nitrogen complexes, and consequently the electronic properties and the tensile strain of the as-grown GaAsN lattice are recovered. Therefore, we conclude that the complex responsible for N passivation contains two deuterium atoms per nitrogen atom, while strain reversal in deuterated GaAsN is due to a complex with a third, less tightly bound deuterium atom.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.76.205323