Room-temperature annealing of vacancy-type defect in high-purity n -type Si

Electron-irradiated p{sup +}-n{sup -}-n{sup +} diodes produced from low-doped high-purity Si wafers were found, by deep-level transient spectroscopy (DLTS), to have a prominent defect, labeled E4, with an energy level 0.37 eV below the conduction-band edge and a concentration of {approx}(1/4) relati...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2007-12, Vol.76 (23), Article 233204
Main Authors: Bleka, J. H., Monakhov, E. V., Svensson, B. G., Avset, B. S.
Format: Article
Language:English
Subjects:
ANNEALING
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEFECTS
DOPED MATERIALS
ELECTRON BEAMS
ELECTRONS
ENERGY LEVELS
EV RANGE
IMPURITIES
IRRADIATION
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE RANGE 0273-0400 K
VACANCIES
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Summary:Electron-irradiated p{sup +}-n{sup -}-n{sup +} diodes produced from low-doped high-purity Si wafers were found, by deep-level transient spectroscopy (DLTS), to have a prominent defect, labeled E4, with an energy level 0.37 eV below the conduction-band edge and a concentration of {approx}(1/4) relative to the divacancy. The samples were kept at room temperature, and the E4 concentration was seen to reduce to half during five weeks. Annealing data revealed a similar peak E5 overlapping that of the single-negatively charged divacancy and showing a one-to-one proportionality with E4. E4 and E5 arise most likely from a vacancy-type defect and a tentative assignment to a planar tetravacancy is put forward.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.76.233204