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Dielectric properties and relaxor behavior of rare-earth (La, Sm, Eu, Dy, Y) substituted barium zirconium titanate ceramics

Based on the Ti-vacancy defect compensation model, ( Ba 1 − x Ln x ) Zr 0.2 Ti 0.8 − x ∕ 4 O 3 ( Ln = La , Sm , Eu , Dy , Y ) ceramics have been fabricated via the conventional solid-state reaction method. The microstructures, dielectric properties, and ferroelectric relaxor behavior of ( Ba 1 − x L...

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Bibliographic Details
Published in:Journal of applied physics 2007-10, Vol.102 (8), p.084106-084106-6
Main Authors: Chou, Xiujian, Zhai, Jiwei, Jiang, Haitao, Yao, Xi
Format: Article
Language:English
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Summary:Based on the Ti-vacancy defect compensation model, ( Ba 1 − x Ln x ) Zr 0.2 Ti 0.8 − x ∕ 4 O 3 ( Ln = La , Sm , Eu , Dy , Y ) ceramics have been fabricated via the conventional solid-state reaction method. The microstructures, dielectric properties, and ferroelectric relaxor behavior of ( Ba 1 − x Ln x ) Zr 0.2 Ti 0.8 − x ∕ 4 O 3 ceramics have been investigated. The results indicate that rare-earth ions with various ionic radii enter the unit cell to substitute for A -site Ba 2 + ions and inhibit the grain growth. The typical ferroelectric relaxor behavior is induced due to the rare-earth ions substitution. The diffuseness of the phase transition and the degree of ferroelectric relaxor behavior are enhanced, the T C is remarkably shifted to lower temperature, and the tunability is suppressed with the increase of x value and substituted ionic radius for ( Ba 1 − x Ln x ) Zr 0.2 Ti 0.8 − x ∕ 4 O 3 ( x = 0.005 - 0.04 , Ln = La , Sm , Eu , Dy , Y ) ceramics. Tunable ferroelectric materials with moderate dielectric constant and low dielectric loss can be obtained by manipulating the doping amount of suitable rare-earth ions.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2799081