Extremely low temperature growth of ZnO by atomic layer deposition

We report on the zinc oxide (ZnO) thin films obtained by the atomic layer deposition (ALD) method using diethyl zinc and water precursors, which allowed us to lower deposition temperature to below 200 ° C . The so-obtained "as grown" ZnO layers are polycrystalline and show excitonic photol...

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Bibliographic Details
Published in:Journal of applied physics 2008-02, Vol.103 (3), p.033515-033515-6
Main Authors: Guziewicz, E., Kowalik, I. A., Godlewski, M., Kopalko, K., Osinniy, V., Wójcik, A., Yatsunenko, S., Łusakowska, E., Paszkowicz, W., Guziewicz, M.
Format: Article
Language:English
Subjects:
CRYSTAL DEFECTS
CRYSTAL GROWTH
DEPOSITION
EPITAXY
LAYERS
MATERIALS SCIENCE
PHOTOLUMINESCENCE
POLYCRYSTALS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THERMODYNAMICS
THIN FILMS
ZINC
ZINC OXIDES
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Summary:We report on the zinc oxide (ZnO) thin films obtained by the atomic layer deposition (ALD) method using diethyl zinc and water precursors, which allowed us to lower deposition temperature to below 200 ° C . The so-obtained "as grown" ZnO layers are polycrystalline and show excitonic photoluminescence (PL) at room temperature, even if the deposition temperature was lowered down to 100 ° C . Defect-related PL bands are of low intensity and are absent for layers grown at 140 − 200 ° C . This is evidence that extremely low temperature growth by ALD can result in high quality ZnO thin films with inefficient nonradiative decay channels and with thermodynamically blocked self-compensation processes.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2836819