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Electronic properties of single-crystal diamonds heavily doped with boron

Single-crystal diamonds with characteristic sizes of 2-7 mm doped with boron in the concentration range 10{sup 19}-10{sup 20} cm{sup -3} have been grown by the temperature gradient method at high static pressures. The temperature dependence of the resistance R of the synthesized single crystals has...

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Bibliographic Details
Published in:Journal of experimental and theoretical physics 2007-04, Vol.104 (4), p.586-589
Main Authors: Buga, S. G., Blank, V. D., Terent’ev, S. A., Kuznetsov, M. S., Nosukhin, S. A., Kulbachinskii, V. A., Krechetov, A. V., Kytin, V. G., Kytin, G. A.
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Language:English
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Summary:Single-crystal diamonds with characteristic sizes of 2-7 mm doped with boron in the concentration range 10{sup 19}-10{sup 20} cm{sup -3} have been grown by the temperature gradient method at high static pressures. The temperature dependence of the resistance R of the synthesized single crystals has been measured in the range 0.5 K < T < 297 K. An activated dependence R(T) with an activation energy of about 50 meV is observed in the range from room temperature to T {approx} 200 K. At temperatures below approximately 50 K, the temperature dependence of the conductivity for heavily doped crystals is proportional to T{sup 1/2}, which is characteristic of degenerate semiconductors with a high number of defects.
ISSN:1063-7761
1090-6509
DOI:10.1134/S1063776107040097