Infrared transmittance spectra of photoluminescent oxide films with Si and Ge quantum dots formed by pulsed laser ablation

The composition of photoluminescent films containing low-dimensional silicon and germanium is studied. Si, Ge, and Al oxide films containing Si and Ge quantum dots are produced by pulsed laser ablation. The infrared transmittance spectra in the range of wave numbers from 650 to 1400 cm −1 and the ti...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2008-05, Vol.42 (5), p.545-549
Main Authors: Lisovskyy, I. P., Zlobin, S. A., Kaganovich, É. B., Manoĭlov, É. G., Begun, E. V.
Format: Article
Language:English
Subjects:
ABLATION
EV RANGE 01-10
LASER RADIATION
LASERS
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
OXIDES
PHOTOLUMINESCENCE
Physics
Physics and Astronomy
PULSED IRRADIATION
QUANTUM DOTS
SILICON
SPECTRA
TEMPERATURE RANGE 0273-0400 K
TIME RESOLUTION
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Summary:The composition of photoluminescent films containing low-dimensional silicon and germanium is studied. Si, Ge, and Al oxide films containing Si and Ge quantum dots are produced by pulsed laser ablation. The infrared transmittance spectra in the range of wave numbers from 650 to 1400 cm −1 and the time-resolved photoluminescence spectra in the energy range from 1.4 to 3.2 eV at room temperature are recorded. Correlations between the conditions of formation of the films, their photoluminescence properties, and the stretching vibrations of Si-O-Si, Ge-O-Ge, and Al-O bonds are established.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782608050102