Determination of the composition and strains in Ge{sub x}Si{sub 1-x}-based nanostructures from Raman spectroscopy data with consideration of the contribution of the heterointerface

The procedure of determining the composition and mechanical strains in Ge{sub x}Si{sub 1-x} quantum dots with the use of Raman spectroscopy is substantially refined. The parameter x characterizing the composition is determined by analyzing the intensity of the peaks in the Raman spectra that corresp...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2007-08, Vol.41 (8)
Main Authors: Volodin, V. A., Efremov, M. D., Yakimov, A. I., Mikhalev, G. Yu, Nikiforov, A. I., Dvurechenskii, A. V.
Format: Article
Language:English
Subjects:
GERMANIUM COMPOUNDS
MATERIALS SCIENCE
QUANTUM DOTS
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SILICON COMPOUNDS
STRAINS
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Summary:The procedure of determining the composition and mechanical strains in Ge{sub x}Si{sub 1-x} quantum dots with the use of Raman spectroscopy is substantially refined. The parameter x characterizing the composition is determined by analyzing the intensity of the peaks in the Raman spectra that correspond to the Ge-Ge and Ge-Si bond vibrations, taking into account the Ge-Si bonds at the heterointerface. The strains in the quantum dots are determined by analyzing the position of the Raman peaks, taking into account the data obtained for the composition of the quantum dots.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378260708012X