Temperature dependence of the band structure of ZnS, ZnSe, ZnTe, and CdTe wurtzite-type semiconductor compounds

The temperature dependence of the energies of some characteristic energy extrema at the {gamma}, L, K, M, A, and H high-symmetry points of the Brillouin zone and the energies of the main interband transitions in hexagonal modifications of ZnS, ZnSe, ZnTe, and CdTe are calculated using the empirical...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2007-08, Vol.41 (8), p.886-896
Main Authors: Gorkavenko, T. V., Zubkova, S. M., Makara, V. A., Rusina, L. N.
Format: Article
Language:English
Subjects:
BRILLOUIN ZONES
CADMIUM TELLURIDES
DEBYE-WALLER FACTOR
ELECTRON-PHONON COUPLING
ENERGY-LEVEL TRANSITIONS
MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
TEMPERATURE COEFFICIENT
TEMPERATURE DEPENDENCE
ZINC SELENIDES
ZINC SULFIDES
ZINC TELLURIDES
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Summary:The temperature dependence of the energies of some characteristic energy extrema at the {gamma}, L, K, M, A, and H high-symmetry points of the Brillouin zone and the energies of the main interband transitions in hexagonal modifications of ZnS, ZnSe, ZnTe, and CdTe are calculated using the empirical pseudopotential method. The effect of the temperature dependence of electron-phonon interaction on the energy-band structure is taken into account using the Debye-Waller factors, and the effect of lattice linear expansion is described using the temperature dependence of the linear expansion coefficient. The features of the temperature dependence of electron levels, interband transitions, and temperature coefficients are discussed in detail. Possible applications of the obtained results are considered.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782607080040