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Temperature dependence of the band structure of ZnS, ZnSe, ZnTe, and CdTe wurtzite-type semiconductor compounds
The temperature dependence of the energies of some characteristic energy extrema at the {gamma}, L, K, M, A, and H high-symmetry points of the Brillouin zone and the energies of the main interband transitions in hexagonal modifications of ZnS, ZnSe, ZnTe, and CdTe are calculated using the empirical...
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Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2007-08, Vol.41 (8), p.886-896 |
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container_title | Semiconductors (Woodbury, N.Y.) |
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creator | Gorkavenko, T. V. Zubkova, S. M. Makara, V. A. Rusina, L. N. |
description | The temperature dependence of the energies of some characteristic energy extrema at the {gamma}, L, K, M, A, and H high-symmetry points of the Brillouin zone and the energies of the main interband transitions in hexagonal modifications of ZnS, ZnSe, ZnTe, and CdTe are calculated using the empirical pseudopotential method. The effect of the temperature dependence of electron-phonon interaction on the energy-band structure is taken into account using the Debye-Waller factors, and the effect of lattice linear expansion is described using the temperature dependence of the linear expansion coefficient. The features of the temperature dependence of electron levels, interband transitions, and temperature coefficients are discussed in detail. Possible applications of the obtained results are considered. |
doi_str_mv | 10.1134/S1063782607080040 |
format | article |
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The effect of the temperature dependence of electron-phonon interaction on the energy-band structure is taken into account using the Debye-Waller factors, and the effect of lattice linear expansion is described using the temperature dependence of the linear expansion coefficient. The features of the temperature dependence of electron levels, interband transitions, and temperature coefficients are discussed in detail. Possible applications of the obtained results are considered.</abstract><cop>United States</cop><doi>10.1134/S1063782607080040</doi><tpages>11</tpages></addata></record> |
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subjects | BRILLOUIN ZONES CADMIUM TELLURIDES DEBYE-WALLER FACTOR ELECTRON-PHONON COUPLING ENERGY-LEVEL TRANSITIONS MATERIALS SCIENCE SEMICONDUCTOR MATERIALS TEMPERATURE COEFFICIENT TEMPERATURE DEPENDENCE ZINC SELENIDES ZINC SULFIDES ZINC TELLURIDES |
title | Temperature dependence of the band structure of ZnS, ZnSe, ZnTe, and CdTe wurtzite-type semiconductor compounds |
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