1.8-{mu}m laser diodes based on quantum-size AlInGaAs/InP heterostructures

The concept of power semiconductor lasers based on asymmetric separate confinement heterostructures is applied to the AlInGaAs/InP heterostructures. The laser heterostructures emitting at the wavelength 1.75-1.8 {mu}m are fabricated by metal-organic chemical vapor deposition. Based on the heterostru...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2007-07, Vol.41 (7)
Main Authors: Lyutetskii, A. V., Borshchev, K. S., Bondarev, A. D., Nalet, T. A., Pikhtin, N. A., Slipchenko, S. O., Fetisova, N. V., Khomylev, M. A., Marmalyuk, A. A., Ryaboshtan, Yu. L., Simakov, V. A., Tarasov, I. S.
Format: Article
Language:English
Subjects:
ALUMINIUM ALLOYS
ARSENIC ALLOYS
CHEMICAL VAPOR DEPOSITION
GALLIUM ALLOYS
INDIUM ALLOYS
INDIUM PHOSPHIDES
MATERIALS SCIENCE
ORGANOMETALLIC COMPOUNDS
SEMICONDUCTOR LASERS
TEMPERATURE RANGE 0273-0400 K
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Summary:The concept of power semiconductor lasers based on asymmetric separate confinement heterostructures is applied to the AlInGaAs/InP heterostructures. The laser heterostructures emitting at the wavelength 1.75-1.8 {mu}m are fabricated by metal-organic chemical vapor deposition. Based on the heterostructures grown, high-power multimode laser diodes of the mesa-strip design with the maximum emission power 2.0 W in the continuous mode at room temperature and 20 W in the pulsed operation mode are fabricated. The internal optical losses in the lasers were reduced to 2.2 cm{sup -1}.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782607070147