Photoelectric properties of In/In{sub 2}Se{sub 3} structures

The hexagonal modification of In{sub 2}Se{sub 3} single crystal is grown by planar crystallization from nearly stoichiometric melt and by the vapor-phase method. For the first time, the Schottky barriers In/n-In{sub 2}Se{sub 3}, which are photosensitive in a wide incident-photon energy range of 1-3....

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2007-01, Vol.41 (1)
Main Authors: Il'chuk, G. A., Kus'nezh, V. V., Petrus', R. Yu, Rud', V. Yu, Rud', Yu. V., Ukrainets, V. O.
Format: Article
Language:English
Subjects:
ABSORPTION
CRYSTALLIZATION
EV RANGE 01-10
INDIUM
INDIUM SELENIDES
MATERIALS SCIENCE
MONOCRYSTALS
PHOTONS
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Summary:The hexagonal modification of In{sub 2}Se{sub 3} single crystal is grown by planar crystallization from nearly stoichiometric melt and by the vapor-phase method. For the first time, the Schottky barriers In/n-In{sub 2}Se{sub 3}, which are photosensitive in a wide incident-photon energy range of 1-3.8 eV at 300 K, are obtained. The nature of the interband photoactive absorption is studied. The energy-barrier height and interband optical-transition energy are estimated. It is concluded that the grown crystals can be used in broadband optical-radiation converters.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782607010125