Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

Current-voltage characteristics of Al/SiO{sub 2}/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechani...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2006-09, Vol.40 (9), p.1052-1054
Main Authors: Ryabchikov, Yu. V., Forsh, P. A., Lebedev, E. A., Timoshenko, V. Yu, Kashkarov, P. K., Kamenev, B. V., Tsybeskov, L.
Format: Article
Language:English
Subjects:
ALUMINIUM
CHARGE CARRIERS
CHARGE TRANSPORT
LAYERS
MATERIALS SCIENCE
NANOSTRUCTURES
SILICA
SILICON
SILICON OXIDES
TUNNEL EFFECT
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Summary:Current-voltage characteristics of Al/SiO{sub 2}/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782606090119