Cubic GaN∕AlN multiple quantum well photodetector

Photodetectors based on intersubband transitions in molecular beam epitaxially grown cubic GaN∕AlN multiple quantum wells were fabricated and tested. The presence of the intersubband transition was confirmed by using the optical absorption technique for structures with different well widths. Samples...

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Bibliographic Details
Published in:Applied physics letters 2008-05, Vol.92 (20)
Main Authors: DeCuir, E. A., Manasreh, M. O., Tschumak, Elena, Schörmann, J., As, D. J., Lischka, K.
Format: Article
Language:English
Subjects:
ABSORPTION
ALUMINIUM NITRIDES
CRYSTAL GROWTH
ELECTRIC POTENTIAL
FABRICATION
GALLIUM NITRIDES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
PHOTODETECTORS
PHOTOVOLTAIC EFFECT
POLISHING
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
WAVEGUIDES
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Summary:Photodetectors based on intersubband transitions in molecular beam epitaxially grown cubic GaN∕AlN multiple quantum wells were fabricated and tested. The presence of the intersubband transition was confirmed by using the optical absorption technique for structures with different well widths. Samples were polished into waveguide configuration on which the devices were fabricated. The photoresponse spectra were collected in the temperature range of 77–215K under the influence of small bias voltages. All devices exhibit photovoltaic effect where the photoresponse is observed at zero bias voltage. Theoretical calculations of the intersubband transition were performed and found to be in agreement with the observed results.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2936279