Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs

Heavily alloyed, 100 nm Ga 1 − x Mn x As ( x > 0.1 ) films are obtained via low-temperature molecular beam epitaxy by utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible electronic, magnetic, and structural properties are optimized in...

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Bibliographic Details
Published in:Applied physics letters 2008-05, Vol.92 (19), p.192502-192502-3
Main Authors: Mack, S., Myers, R. C., Heron, J. T., Gossard, A. C., Awschalom, D. D.
Format: Article
Language:English
Subjects:
ARSENIC
CRYSTAL GROWTH
CURIE POINT
FERROMAGNETIC MATERIALS
FERROMAGNETISM
GALLIUM ARSENIDES
MAGNETIC SEMICONDUCTORS
MANGANESE ARSENIDES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
STOICHIOMETRY
THIN FILMS
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Summary:Heavily alloyed, 100 nm Ga 1 − x Mn x As ( x > 0.1 ) films are obtained via low-temperature molecular beam epitaxy by utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible electronic, magnetic, and structural properties are optimized in a narrow range of stoichiometric growth conditions. In contrast to a prediction of the Zener model of hole-mediated ferromagnetism, the Curie temperature of the stoichiometric material is independent of x (for x > 0.1 ), while substitutional Mn content is proportional to x within a large window of growth conditions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2927481