Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer

InAs quantum dots (QDs) were grown on patterned Si substrates with a thin GaAs buffer using SiO2 as a mask by molecular beam epitaxy. GaAs was firstly selectively grown on the exposed Si surface with feature size around 250nm. The InAs QDs were selectively grown on top of the GaAs. Low temperature p...

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Bibliographic Details
Published in:Applied physics letters 2008-02, Vol.92 (8)
Main Authors: Zhao, Zuoming, Hao, Zhibiao, Yadavalli, Kameshwar, Wang, Kang L., Jacob, Ajey P.
Format: Article
Language:English
Subjects:
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
OPTICAL ACTIVITY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
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Summary:InAs quantum dots (QDs) were grown on patterned Si substrates with a thin GaAs buffer using SiO2 as a mask by molecular beam epitaxy. GaAs was firstly selectively grown on the exposed Si surface with feature size around 250nm. The InAs QDs were selectively grown on top of the GaAs. Low temperature photoluminescence (PL) measurements show strong optical activity in the wavelength range from 900to1050nm. The temperature dependent measurement of the PL response indicates that, for temperatures over 110K, the carrier escape from quantum dots leads to quenching of the signal. The PL results demonstrate that using nanostructures, it is possible to integrate high quality direct gap III-V materials on Si with high optical activity, leading to potentially new optoelectronic applications on Si and other convenient substrates which are lattice mismatched to InAs and other III-V materials.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2833700