Doping efficiency, dopant location, and oxidation of Si nanocrystals

Gas-phase plasma-synthesized silicon nanocrystals (Si-NCs) are doped with boron (B) or phosphorous (P) during synthesis. The doping efficiency of B is smaller than that of P, consistent with the theoretical prediction of impurity formation energies. Despite vastly different synthesis conditions, the...

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Bibliographic Details
Published in:Applied physics letters 2008-03, Vol.92 (12), p.123102-123102-3
Main Authors: Pi, X. D., Gresback, R., Liptak, R. W., Campbell, S. A., Kortshagen, U.
Format: Article
Language:English
Subjects:
BORON
DOPED MATERIALS
ETCHING
FORMATION HEAT
IMPURITIES
MATERIALS SCIENCE
NANOSTRUCTURES
NUCLEATION
OXIDATION
PHOTOLUMINESCENCE
PLASMA
SEMICONDUCTOR MATERIALS
SILICON
SYNTHESIS
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Summary:Gas-phase plasma-synthesized silicon nanocrystals (Si-NCs) are doped with boron (B) or phosphorous (P) during synthesis. The doping efficiency of B is smaller than that of P, consistent with the theoretical prediction of impurity formation energies. Despite vastly different synthesis conditions, the effect of doping on the photoluminescence (PL) of gas-phase-synthesized Si-NCs is qualitatively similar to that of Si-NCs doped during solid phase nucleation. Studies of oxidation-induced changes in PL and etching-induced changes in dopant concentration show that P resides at or near the Si-NC surface, while B is in the Si-NC cores. The oxidation of Si-NCs follows the Cabrera-Mott mechanism [ N. Cabrera and N. F. Mott , Rep. Prog. Phys. 12 , 163 ( 1948 ) ].
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2897291