Postgrowth annealing of GaInAs∕GaAs and GaInAsN∕GaAs quantum well samples placed in a proximity GaAs box: A simple method to improve the crystalline quality

The effects of thermal annealing on GaInAs∕GaAs and GaInAsN∕GaAs quantum wells, grown by molecular beam epitaxy, were investigated. Optical and structural properties were examined upon annealing when the samples had a 200nm thick SiO2 cap layer, or were placed in a so-called GaAs box or were left un...

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Bibliographic Details
Published in:Applied physics letters 2008-06, Vol.92 (23)
Main Authors: Pakarinen, J., Peng, C. S., Puustinen, J., Laukkanen, P., Korpijärvi, V.-M., Tukiainen, A., Pessa, M.
Format: Article
Language:English
Subjects:
ANNEALING
CRYSTAL GROWTH
GALLIUM ARSENIDES
GALLIUM NITRIDES
INDIUM ARSENIDES
INDIUM NITRIDES
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SPECTRAL SHIFT
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Summary:The effects of thermal annealing on GaInAs∕GaAs and GaInAsN∕GaAs quantum wells, grown by molecular beam epitaxy, were investigated. Optical and structural properties were examined upon annealing when the samples had a 200nm thick SiO2 cap layer, or were placed in a so-called GaAs box or were left uncapped. The GaAs box gave rise to the strongest photoluminescence without significant blueshift or structural changes at moderate annealing temperature. Capping with SiO2 impaired the samples and caused a more pronounced blueshift for the GaInAs quantum wells than for the GaInAsN ones. These results consolidate our understanding of the blueshift mechanisms.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2943157