X-ray absorption in GaGdN: A study of local structure

In this study, we report on the incorporation of dilute Gd amounts into GaN films grown by molecular beam epitaxy. A combination of x-ray fluorescence with x-ray absorption spectroscopic techniques enabled us to examine not only the distribution of rare earth atoms in the GaN matrix but also the sho...

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Bibliographic Details
Published in:Applied physics letters 2008-07, Vol.93 (2), p.021916-021916-3
Main Authors: Martínez-Criado, G., Sancho-Juan, O., Garro, N., Sans, J. A., Cantarero, A., Susini, J., Roever, M., Mai, D.-D., Bedoya-Pinto, A., Malindretos, J., Rizzi, A.
Format: Article
Language:English
Subjects:
ABSORPTION
CRYSTAL GROWTH
FLUORESCENCE
GADOLINIUM
GADOLINIUM COMPOUNDS
GALLIUM NITRIDES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SYNCHROTRON RADIATION
THIN FILMS
X RADIATION
X-RAY SPECTRA
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Summary:In this study, we report on the incorporation of dilute Gd amounts into GaN films grown by molecular beam epitaxy. A combination of x-ray fluorescence with x-ray absorption spectroscopic techniques enabled us to examine not only the distribution of rare earth atoms in the GaN matrix but also the short-range structural order. Our results show Gd atoms in a trivalent state with tetrahedral coordination, thus substituting Ga in the wurtzite GaN structure.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2957984