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X-ray absorption in GaGdN: A study of local structure
In this study, we report on the incorporation of dilute Gd amounts into GaN films grown by molecular beam epitaxy. A combination of x-ray fluorescence with x-ray absorption spectroscopic techniques enabled us to examine not only the distribution of rare earth atoms in the GaN matrix but also the sho...
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| Published in: | Applied physics letters 2008-07, Vol.93 (2), p.021916-021916-3 |
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| Main Authors: | , , , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c377t-238cc6139ad272b0e45825508214fe8b5fa990c600e116655267954d8cd1f38d3 |
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| cites | cdi_FETCH-LOGICAL-c377t-238cc6139ad272b0e45825508214fe8b5fa990c600e116655267954d8cd1f38d3 |
| container_end_page | 021916-3 |
| container_issue | 2 |
| container_start_page | 021916 |
| container_title | Applied physics letters |
| container_volume | 93 |
| creator | Martínez-Criado, G. Sancho-Juan, O. Garro, N. Sans, J. A. Cantarero, A. Susini, J. Roever, M. Mai, D.-D. Bedoya-Pinto, A. Malindretos, J. Rizzi, A. |
| description | In this study, we report on the incorporation of dilute Gd amounts into GaN films grown by molecular beam epitaxy. A combination of x-ray fluorescence with x-ray absorption spectroscopic techniques enabled us to examine not only the distribution of rare earth atoms in the GaN matrix but also the short-range structural order. Our results show Gd atoms in a trivalent state with tetrahedral coordination, thus substituting Ga in the wurtzite GaN structure. |
| doi_str_mv | 10.1063/1.2957984 |
| format | article |
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A.</au><au>Cantarero, A.</au><au>Susini, J.</au><au>Roever, M.</au><au>Mai, D.-D.</au><au>Bedoya-Pinto, A.</au><au>Malindretos, J.</au><au>Rizzi, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>X-ray absorption in GaGdN: A study of local structure</atitle><jtitle>Applied physics letters</jtitle><date>2008-07-14</date><risdate>2008</risdate><volume>93</volume><issue>2</issue><spage>021916</spage><epage>021916-3</epage><pages>021916-021916-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>In this study, we report on the incorporation of dilute Gd amounts into GaN films grown by molecular beam epitaxy. A combination of x-ray fluorescence with x-ray absorption spectroscopic techniques enabled us to examine not only the distribution of rare earth atoms in the GaN matrix but also the short-range structural order. 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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-07, Vol.93 (2), p.021916-021916-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21123969 |
| source | American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| subjects | ABSORPTION CRYSTAL GROWTH FLUORESCENCE GADOLINIUM GADOLINIUM COMPOUNDS GALLIUM NITRIDES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY SEMICONDUCTOR MATERIALS SYNCHROTRON RADIATION THIN FILMS X RADIATION X-RAY SPECTRA |
| title | X-ray absorption in GaGdN: A study of local structure |
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