Lateral epitaxial growth of germanium on silicon oxide

We have developed a method using local oxidation on silicon to create nanoscale silicon seeds for the lateral epitaxial overgrowth of germanium on silicon oxide. The germanium growth starts selectively from silicon seed lines, proceeds by wetting the Si O 2 layer and coalesces without formation of g...

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Bibliographic Details
Published in:Applied physics letters 2008-07, Vol.93 (4), p.043110-043110-3
Main Authors: Cammilleri, V. D., Yam, V., Fossard, F., Renard, C., Bouchier, D., Fazzini, P. F., Ortolani, L., Houdellier, F., Hÿtch, M.
Format: Article
Language:English
Subjects:
Accelerator Physics
CRYSTAL DEFECTS
CRYSTAL GROWTH
Electromagnetism
Engineering Sciences
EPITAXY
GERMANIUM
GRAIN BOUNDARIES
High Energy Physics - Experiment
LAYERS
Materials
MATERIALS SCIENCE
NANOSTRUCTURES
Optics
OXIDATION
Photonic
Physics
Quantum Physics
Signal and Image processing
SILICON
SILICON OXIDES
TRANSMISSION ELECTRON MICROSCOPY
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Summary:We have developed a method using local oxidation on silicon to create nanoscale silicon seeds for the lateral epitaxial overgrowth of germanium on silicon oxide. The germanium growth starts selectively from silicon seed lines, proceeds by wetting the Si O 2 layer and coalesces without formation of grain boundary. Analysis by high resolution transmission electron microscopy have shown that Ge layers grown above silicon oxide are perfectly monocrystalline and are free of defect. The only detected defects are situated at the Ge ∕ Si interface. Geometrical phase analyses of the microscopy images have shown that the Ge layer is fully relaxed and homogeneous.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2963363