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Lateral epitaxial growth of germanium on silicon oxide
We have developed a method using local oxidation on silicon to create nanoscale silicon seeds for the lateral epitaxial overgrowth of germanium on silicon oxide. The germanium growth starts selectively from silicon seed lines, proceeds by wetting the Si O 2 layer and coalesces without formation of g...
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| Published in: | Applied physics letters 2008-07, Vol.93 (4), p.043110-043110-3 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c447t-5bd9971273a028965d0a6fbca4178c26df097a8b7a24ec4b0ac9856ec43143443 |
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| cites | cdi_FETCH-LOGICAL-c447t-5bd9971273a028965d0a6fbca4178c26df097a8b7a24ec4b0ac9856ec43143443 |
| container_end_page | 043110-3 |
| container_issue | 4 |
| container_start_page | 043110 |
| container_title | Applied physics letters |
| container_volume | 93 |
| creator | Cammilleri, V. D. Yam, V. Fossard, F. Renard, C. Bouchier, D. Fazzini, P. F. Ortolani, L. Houdellier, F. Hÿtch, M. |
| description | We have developed a method using local oxidation on silicon to create nanoscale silicon seeds for the lateral epitaxial overgrowth of germanium on silicon oxide. The germanium growth starts selectively from silicon seed lines, proceeds by wetting the
Si
O
2
layer and coalesces without formation of grain boundary. Analysis by high resolution transmission electron microscopy have shown that Ge layers grown above silicon oxide are perfectly monocrystalline and are free of defect. The only detected defects are situated at the
Ge
∕
Si
interface. Geometrical phase analyses of the microscopy images have shown that the Ge layer is fully relaxed and homogeneous. |
| doi_str_mv | 10.1063/1.2963363 |
| format | article |
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Si
O
2
layer and coalesces without formation of grain boundary. Analysis by high resolution transmission electron microscopy have shown that Ge layers grown above silicon oxide are perfectly monocrystalline and are free of defect. The only detected defects are situated at the
Ge
∕
Si
interface. Geometrical phase analyses of the microscopy images have shown that the Ge layer is fully relaxed and homogeneous.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2963363</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>Accelerator Physics ; CRYSTAL DEFECTS ; CRYSTAL GROWTH ; Electromagnetism ; Engineering Sciences ; EPITAXY ; GERMANIUM ; GRAIN BOUNDARIES ; High Energy Physics - Experiment ; LAYERS ; Materials ; MATERIALS SCIENCE ; NANOSTRUCTURES ; Optics ; OXIDATION ; Photonic ; Physics ; Quantum Physics ; Signal and Image processing ; SILICON ; SILICON OXIDES ; TRANSMISSION ELECTRON MICROSCOPY</subject><ispartof>Applied physics letters, 2008-07, Vol.93 (4), p.043110-043110-3</ispartof><rights>2008 American Institute of Physics</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c447t-5bd9971273a028965d0a6fbca4178c26df097a8b7a24ec4b0ac9856ec43143443</citedby><cites>FETCH-LOGICAL-c447t-5bd9971273a028965d0a6fbca4178c26df097a8b7a24ec4b0ac9856ec43143443</cites><orcidid>0000-0002-9099-0129 ; 0000-0002-5272-7792 ; 0000-0002-4307-6481</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2963363$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,778,780,791,881,27901,27902,76125</link.rule.ids><backlink>$$Uhttps://hal.science/hal-01742002$$DView record in HAL$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/21124012$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Cammilleri, V. D.</creatorcontrib><creatorcontrib>Yam, V.</creatorcontrib><creatorcontrib>Fossard, F.</creatorcontrib><creatorcontrib>Renard, C.</creatorcontrib><creatorcontrib>Bouchier, D.</creatorcontrib><creatorcontrib>Fazzini, P. F.</creatorcontrib><creatorcontrib>Ortolani, L.</creatorcontrib><creatorcontrib>Houdellier, F.</creatorcontrib><creatorcontrib>Hÿtch, M.</creatorcontrib><title>Lateral epitaxial growth of germanium on silicon oxide</title><title>Applied physics letters</title><description>We have developed a method using local oxidation on silicon to create nanoscale silicon seeds for the lateral epitaxial overgrowth of germanium on silicon oxide. The germanium growth starts selectively from silicon seed lines, proceeds by wetting the
Si
O
2
layer and coalesces without formation of grain boundary. Analysis by high resolution transmission electron microscopy have shown that Ge layers grown above silicon oxide are perfectly monocrystalline and are free of defect. The only detected defects are situated at the
Ge
∕
Si
interface. Geometrical phase analyses of the microscopy images have shown that the Ge layer is fully relaxed and homogeneous.</description><subject>Accelerator Physics</subject><subject>CRYSTAL DEFECTS</subject><subject>CRYSTAL GROWTH</subject><subject>Electromagnetism</subject><subject>Engineering Sciences</subject><subject>EPITAXY</subject><subject>GERMANIUM</subject><subject>GRAIN BOUNDARIES</subject><subject>High Energy Physics - Experiment</subject><subject>LAYERS</subject><subject>Materials</subject><subject>MATERIALS SCIENCE</subject><subject>NANOSTRUCTURES</subject><subject>Optics</subject><subject>OXIDATION</subject><subject>Photonic</subject><subject>Physics</subject><subject>Quantum Physics</subject><subject>Signal and Image processing</subject><subject>SILICON</subject><subject>SILICON OXIDES</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLAzEUhYMoWKsL_8GAKxdTc5NMMrMRSlErDLjRdbiTybSR6aQk8fXvndJSV67OuZfvPjiEXAOdAZX8DmaskpxLfkImQJXKOUB5SiaUUp7LqoBzchHj-1gWjPMJkTUmG7DP7NYl_HajWwX_ldaZ77KVDRsc3Mcm80MWXe_MqP7btfaSnHXYR3t10Cl5e3x4XSzz-uXpeTGvcyOESnnRtFWlgCmOlJWVLFqKsmsMClClYbLtaKWwbBQyYY1oKJqqLORoOQguBJ-Sm_1eH5PT0bhkzXr8YrAmaQbABAU2Urd7ao293ga3wfCjPTq9nNd616OgBKOUfcIfa4KPMdjuOABU7yLUoA8Rjuz9nt0dxuT88D98yFEfc9SrwH8BtbB19w</recordid><startdate>20080728</startdate><enddate>20080728</enddate><creator>Cammilleri, V. D.</creator><creator>Yam, V.</creator><creator>Fossard, F.</creator><creator>Renard, C.</creator><creator>Bouchier, D.</creator><creator>Fazzini, P. F.</creator><creator>Ortolani, L.</creator><creator>Houdellier, F.</creator><creator>Hÿtch, M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-9099-0129</orcidid><orcidid>https://orcid.org/0000-0002-5272-7792</orcidid><orcidid>https://orcid.org/0000-0002-4307-6481</orcidid></search><sort><creationdate>20080728</creationdate><title>Lateral epitaxial growth of germanium on silicon oxide</title><author>Cammilleri, V. D. ; Yam, V. ; Fossard, F. ; Renard, C. ; Bouchier, D. ; Fazzini, P. F. ; Ortolani, L. ; Houdellier, F. ; Hÿtch, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c447t-5bd9971273a028965d0a6fbca4178c26df097a8b7a24ec4b0ac9856ec43143443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Accelerator Physics</topic><topic>CRYSTAL DEFECTS</topic><topic>CRYSTAL GROWTH</topic><topic>Electromagnetism</topic><topic>Engineering Sciences</topic><topic>EPITAXY</topic><topic>GERMANIUM</topic><topic>GRAIN BOUNDARIES</topic><topic>High Energy Physics - Experiment</topic><topic>LAYERS</topic><topic>Materials</topic><topic>MATERIALS SCIENCE</topic><topic>NANOSTRUCTURES</topic><topic>Optics</topic><topic>OXIDATION</topic><topic>Photonic</topic><topic>Physics</topic><topic>Quantum Physics</topic><topic>Signal and Image processing</topic><topic>SILICON</topic><topic>SILICON OXIDES</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cammilleri, V. D.</creatorcontrib><creatorcontrib>Yam, V.</creatorcontrib><creatorcontrib>Fossard, F.</creatorcontrib><creatorcontrib>Renard, C.</creatorcontrib><creatorcontrib>Bouchier, D.</creatorcontrib><creatorcontrib>Fazzini, P. F.</creatorcontrib><creatorcontrib>Ortolani, L.</creatorcontrib><creatorcontrib>Houdellier, F.</creatorcontrib><creatorcontrib>Hÿtch, M.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cammilleri, V. D.</au><au>Yam, V.</au><au>Fossard, F.</au><au>Renard, C.</au><au>Bouchier, D.</au><au>Fazzini, P. F.</au><au>Ortolani, L.</au><au>Houdellier, F.</au><au>Hÿtch, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lateral epitaxial growth of germanium on silicon oxide</atitle><jtitle>Applied physics letters</jtitle><date>2008-07-28</date><risdate>2008</risdate><volume>93</volume><issue>4</issue><spage>043110</spage><epage>043110-3</epage><pages>043110-043110-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We have developed a method using local oxidation on silicon to create nanoscale silicon seeds for the lateral epitaxial overgrowth of germanium on silicon oxide. The germanium growth starts selectively from silicon seed lines, proceeds by wetting the
Si
O
2
layer and coalesces without formation of grain boundary. Analysis by high resolution transmission electron microscopy have shown that Ge layers grown above silicon oxide are perfectly monocrystalline and are free of defect. The only detected defects are situated at the
Ge
∕
Si
interface. Geometrical phase analyses of the microscopy images have shown that the Ge layer is fully relaxed and homogeneous.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.2963363</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-9099-0129</orcidid><orcidid>https://orcid.org/0000-0002-5272-7792</orcidid><orcidid>https://orcid.org/0000-0002-4307-6481</orcidid><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-07, Vol.93 (4), p.043110-043110-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21124012 |
| source | American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| subjects | Accelerator Physics CRYSTAL DEFECTS CRYSTAL GROWTH Electromagnetism Engineering Sciences EPITAXY GERMANIUM GRAIN BOUNDARIES High Energy Physics - Experiment LAYERS Materials MATERIALS SCIENCE NANOSTRUCTURES Optics OXIDATION Photonic Physics Quantum Physics Signal and Image processing SILICON SILICON OXIDES TRANSMISSION ELECTRON MICROSCOPY |
| title | Lateral epitaxial growth of germanium on silicon oxide |
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