Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix

The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf power in high vacuum plasma enhanced chemical vapor deposition system using silane methane gas mixture highly diluted in hydrogen. In this paper, we have studied the evolution of the structural, optic...

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Bibliographic Details
Published in:Journal of applied physics 2008-03, Vol.103 (6), p.063507-063507-6
Main Authors: Coscia, U., Ambrosone, G., Basa, D. K.
Format: Article
Language:English
Subjects:
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
CRYSTALS
ELECTRICAL PROPERTIES
ENERGY GAP
HYDROGEN
MATERIALS SCIENCE
METHANE
NANOSTRUCTURES
PHOTOLUMINESCENCE
PLASMA
SEMICONDUCTOR MATERIALS
SILANES
SILICON
SILICON CARBIDES
SPECTRAL SHIFT
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
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Summary:The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf power in high vacuum plasma enhanced chemical vapor deposition system using silane methane gas mixture highly diluted in hydrogen. In this paper, we have studied the evolution of the structural, optical, and electrical properties of this material as a function of rf power. We have observed visible photoluminescence at room temperature and also have discussed the role played by the Si nanocrystallites and the amorphous silicon carbide matrix. The decrease of the nanocrystalline size, responsible for quantum confinement effect, facilitated by the amorphous silicon carbide matrix, is shown to be the primary cause for the increase in the PL intensity, blueshift of the PL peak position, decrease of the PL width (full width at half maximum) as well as the increase of the optical band gap and the decrease of the dark conductivity.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2844477