Investigation of the origin of deep levels in CdTe doped with Bi

Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 10 17 - 10 19 at. ∕ cm 3...

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Bibliographic Details
Published in:Journal of applied physics 2008-05, Vol.103 (9), p.094901-094901-6
Main Authors: Saucedo, E., Franc, J., Elhadidy, H., Horodysky, P., Ruiz, C. M., Bermúdez, V., Sochinskii, N. V.
Format: Article
Language:English
Subjects:
BISMUTH
CADMIUM TELLURIDES
CRYSTAL DEFECTS
DOPED MATERIALS
LATTICE PARAMETERS
MATERIALS SCIENCE
PHOTOLUMINESCENCE
RECOMBINATION
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
THERMOELECTRICITY
X-RAY DIFFRACTION
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Summary:Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 10 17 - 10 19 at. ∕ cm 3 . The semi-insulating state observed in crystals with low Bi concentration is assigned to the formation of a shallow donor level and a deep donor recombination center. Studying the evolution of lattice parameter with temperature, we postulate that the deep center is formed by a Te-Te dimer and their formation is explained by a tetrahedral to octahedral distortion, due to the introduction of Bi in the CdTe lattice. We also shows that this model agrees with the electrical, optical, and transport charge properties of the samples.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2903512