Recrystallization of ion-irradiated germanium due to intense electronic excitation

Germanium single crystals were irradiated at room temperature by 1.5 MeV energy germanium ions and high energy silver ions of 100 MeV . Based on the transmission and high-resolution electron microscopic investigations, we present the experimental evidence of complete recrystallization of the amorphi...

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Bibliographic Details
Published in:Journal of applied physics 2008-06, Vol.103 (12), p.123532-123532-5
Main Authors: Som, T., Ghatak, J., Sinha, O. P., Sivakumar, R., Kanjilal, D.
Format: Article
Language:English
Subjects:
CRYSTALLIZATION
EPITAXY
EXCITATION
GERMANIUM
GERMANIUM IONS
ION BEAMS
ION IMPLANTATION
IRRADIATION
MATERIALS SCIENCE
MELTING
MEV RANGE 10-100
MONOCRYSTALS
RECRYSTALLIZATION
SEMICONDUCTOR MATERIALS
SILVER IONS
TEMPERATURE RANGE 0273-0400 K
THERMAL SPIKES
THERMODYNAMICS
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Summary:Germanium single crystals were irradiated at room temperature by 1.5 MeV energy germanium ions and high energy silver ions of 100 MeV . Based on the transmission and high-resolution electron microscopic investigations, we present the experimental evidence of complete recrystallization of the amorphized germanium layer, formed by the self-ion-implantation, due to intense electronic excitations generated by the swift Ag ions. This phenomenon is observed at room temperature-far below the solid phase epitaxial growth temperature and that at which low energy ion beam induced epitaxial crystallization takes place. The results are explained in the light of local transient melting due to a high rate of energy deposition by the silver ions and its subsequent cooling. Based on the calculations on thermal spike concept in combination with the nonequilibrium thermodynamics, we obtain a reasonably good estimate for the experimental observation.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2948930