Titanium doped silicon layers with very high concentration

Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10 18   cm − 3 . Hall effect measurements show n -type samples with mobility values of about 400   cm 2 / V s at room temperature. These results clearly indi...

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Bibliographic Details
Published in:Journal of applied physics 2008-07, Vol.104 (1), p.016105-016105-3
Main Authors: Olea, J., Toledano-Luque, M., Pastor, D., González-Díaz, G., Mártil, I.
Format: Article
Language:English
Subjects:
ANNEALING
DOPED MATERIALS
HALL EFFECT
ION IMPLANTATION
LAYERS
MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
SILICON
SILICON SOLAR CELLS
TEMPERATURE RANGE 0273-0400 K
TITANIUM
TITANIUM SILICIDES
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Summary:Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10 18   cm − 3 . Hall effect measurements show n -type samples with mobility values of about 400   cm 2 / V s at room temperature. These results clearly indicate that Ti solid solubility limit in Si has been exceeded by far without the formation of a titanium silicide layer. This is a promising result toward obtaining of an intermediate band into Si that allows the design of a new generation of high efficiency solar cell using Ti implanted Si wafers.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2949258