Negative- U property of interstitial hydrogen in GaAs

We identify the donor level of interstitial hydrogen in GaAs, which is characterized by the activation enthalpy E{sub C}-E{sub t}=0.13 eV. This level is the marker of two different but closely related defect structures, which are indistinguishable as far as their emission properties are concerned; h...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2008-07, Vol.78 (3), Article 035211
Main Authors: Kolkovsky, Vl, Nielsen, K. Bonde, Larsen, A. Nylandsted, Dobaczewski, L.
Format: Article
Language:English
Subjects:
ANNEALING
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
EMISSION
ENERGY LEVELS
ENTHALPY
GALLIUM ARSENIDES
HYDROGEN
IMPURITIES
INTERSTITIALS
SEMICONDUCTOR MATERIALS
STRAINS
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Summary:We identify the donor level of interstitial hydrogen in GaAs, which is characterized by the activation enthalpy E{sub C}-E{sub t}=0.13 eV. This level is the marker of two different but closely related defect structures, which are indistinguishable as far as their emission properties are concerned; however, discernible on the basis of their different dynamical behaviors are revealed by annealing studies. We interpret the two structures as regular bond center hydrogen H(BC) and bond center hydrogen H(BC{sup '}), which is perturbed by the local strain from a neighbor point defect. We demonstrate negative-U properties of the perturbed structure and infer that the corresponding acceptor H(T{sup '}) lies deep in the band gap. These results for interstitial hydrogen in GaAs are in every aspect analogous to the properties of interstitial hydrogen in Si.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.78.035211